View FGA20N120FTD_4973398.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGA20N120FTD 1200V, 20A Trench IGBT
December 2007
FGA20N120FTD
1200V, 20A Trench IGBT
Features
* Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.6V @ IC = 20A * High input impedance * RoHS compliant
tm
General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Applications
* Induction heating and Microvewave oven * Soft switching applications
C
G
TO-3PN
GCE E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC
o
Ratings
1200 25 @ TC = 25oC 40 20 60 20 298 119 -55 to +150 -55 to +150 300 @ TC = 100oC
Units
V V A A A A W W
o o o
C C C
Notes: 1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.42 2.0 40
Units
o o o
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA20N120FTD Rev. A
FGA20N120FTD 1200V, 20A Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA20N120FTD
Device
FGA20N120FTDTU
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V TC = 25oC IC = 20A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3080 95 60 pF pF pF 3.5 5.9 1.60 7.5 2.00 V V
-
1.85
-
V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 20A, VGE = 15V VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC 30 79 143 217 0.42 0.71 1.13 29 93 147 259 0.47 0.86 1.33 137 23 65 320 1.05 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
2 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 20A TC = 25oC
o
Min.
-
Typ.
1.3 1.3 447 485 48 50 10.8 12
Max
1.7 -
Units
V
TC = 125 C TC = 25oC TC = 125oC
o
Diode Reverse Recovery Time IES =20A, dI/dt = 200A/s
ns
Diode Peak Reverse Recovery Current
TC = 25oC TC = 125 C TC = 25oC TC = 125 C
o
A C
Diode Reverse Recovery Charge
3 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V
17V 15V
20V
17V 15V
150
Collector Current, IC [A]
120 90 60 30 0 0.0
8V 7V V = 6V GE 10V 9V 12V
120 90 60
7V VGE = 6V 10V 9V 8V
12V
30 0 0.0
1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V]
9.0
1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V]
9.0
Figure 3. Typical Saturation Voltage Characteristics
120 100
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
120 100
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
80 60 40 20 0 0
TC = 125 C
o
80 60 40 20 0
1 2 3 4 5 Collector-Emitter Voltage, VCE [V]
6
3
6 9 12 Gate-Emitter Voltage,VGE [V]
15
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 40A
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
2.4
16
12
2.0
20A
8
1.6
IC = 10A
4
20A IC = 10A
40A
1.2 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
4 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
5000
Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
4000
12
3000
8
2000
Coes
4
IC = 10A
20A 40A
1000
Cres
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
100
10s
Gate-Emitter Voltage, VGE [V]
TC = 25 C
Collector Current, Ic [A]
12
VCC = 200V
600V
10
100s 1ms
9
400V
1
10 ms DC *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
6
0.1
3
0 0 30 60 90 120 Gate Charge, Qg [nC] 150
0.01 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs. Gate Resistance
300
Figure 12. Turn-off Characteristics vs. Gate Resistance
2000
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
1000
Switching Time [ns]
100
tr
Switching Time [ns]
td(off)
td(on)
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
tf
100
100
70
10 0 20 40 60 80 Gate Resistance, RG []
0
20
40
60
80
100
Gate Resistance, RG []
5 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1000
tr
Switching Time [ns]
100
Switching Time [ns]
TC = 125 C
tf
100
td(off)
td(on)
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
10 10
20
30
40
50
10 10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
4
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
Figure 16. Switching Loss vs. Collector Current
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Switching Loss [mJ]
Switching Loss [mJ]
Eoff
TC = 125 C
Eoff
1
1
Eon
Eon
0.3 0
20
40 60 80 Gate Resistance, RG []
100
0.1 10
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
80
30
o
10
Collector Current, IC [A]
TJ = 125 C TJ = 25 C
o
10
Forward Current, IF [A]
1
Safe Operating Area
TC = 125 C TC = 25 C
o
o
1 1
VGE = 15V, TC = 125 C
o
10
100
1000 2000
0.1 0.0
Collector-Emitter Voltage, VCE [V]
0.5 1.0 1.5 Forward Voltage, VF [V]
2.0
6 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
60
Reverse Recovery Currnet, Irr [A]
Figure 20. Stored Charge
15000
Stored Recovery Charge, Qrr [nC]
50 40 30 20 10 0 5 10 15 20 Forward Current, IF [A] 25
200A/s
12000
200A/s
9000
di/dt = 100A/s
6000
di/dt = 100A/s
3000
0 5 10 15 20 25
Forward Current, IF [A]
Figure 21.Reverse Recovery Time
1000
Reverse Recovery Time, trr [ns]
800
di/dt = 100A/s
600
200A/s
400
200
0 5 10 15 20 25
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1 Thermal Response [Zthjc]
0.5 0.2
0.1
0.1 0.05 0.02 0.01 single pulse
PDM t1 t2
0.01
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3 0.01 0.1 Rectangular Pulse Duration [sec]
1
10
7 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
8 FGA20N120FTD Rev. A
www.fairchildsemi.com
FGA20N120FTD 1200V, 20A Trench IGBT
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGA20N120FTD Rev. A
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FGA20N120FTD

	To Download FGA20N120FTD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .